Title :
High-Power Gunn Oscillator Diodes on Type-IIa Diamond Heat Sinks
Author :
Migitaka, M. ; Miyazaki, Moriyasu ; Saito, Kazuyuki
fDate :
11/1/1970 12:00:00 AM
Abstract :
Gallium arsenide Gunn diodes were mounted on a type-IIa diamond to reduce the thermal spreading resistance just under the wafer of the diodes. By using the diamond, the total thermal resistance of the diodes was reduced to half the usual resistance. A single-wafer Gunn diode on the type-IIa diamond produced 910 mW at 9.9 GHz with an efficiency of 3.1 percent.
Keywords :
Gold; Gunn devices; Heat sinks; Injection-locked oscillators; Microwave oscillators; Resistance heating; Semiconductor diodes; Temperature; Thermal conductivity; Thermal resistance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1970.1127396
