N-channel Si/SiGe MODFETs: effects of rapid thermal activation on the DC performance

Author

König, U. ; Boers, A.J. ; Schäffler, F.

Author_Institution

Daimler-Benz Res. Center, Ulm, Germany

Volume

14

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

97

Lastpage

99

Abstract

Si/SiGe MODFETs with P- and As-implanted source and drain contacts were fabricated. The effect of rapid thermal activation (RTA) on the DC performance of those devices was studied. The RTA temperature determines the device operation, i.e. a 550-750 degrees C treatment yields enhancement and a 900 degrees C annealing results in depletion mode. Extremely high ratios of the 77- to the 300 K transconductance ( approximately=4.5) were found. Low thermal budget RTA ( approximately=600 degrees C) is essential to eliminate degradation of the channel mobility and to achieve a significant increase of the 77 K transconductance.<>

Keywords

Ge-Si alloys; annealing; carrier mobility; elemental semiconductors; high electron mobility transistors; rapid thermal processing; semiconductor materials; silicon; 550 to 900 degC; As implanted drain; As-implanted source; DC performance; MODFETs; P implanted drain; P implanted source; Si-Si/sub 0.5/Ge/sub 0.5/-Si/sub 0.5/Ge/sub 0.5/:Sb; Si:As; Si:P; channel mobility; depletion mode; enhancement; n-channel device; rapid thermal activation; Epitaxial layers; Germanium silicon alloys; HEMTs; MODFETs; Molecular beam epitaxial growth; Rapid thermal annealing; Silicon germanium; Temperature; Thermal degradation; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215123

Filename

215123