DocumentCode
898336
Title
A new negative resistance of semiconductor bulk
Author
Kawamura, Mitsuhiro ; Morishita, S.
Volume
56
Issue
7
fYear
1968
fDate
7/1/1968 12:00:00 AM
Firstpage
1213
Lastpage
1215
Abstract
An analysis is presented of a new negative resistance that appears when the drift velocity of carriers exceeds the thermal velocity in the ordinary element semiconductor bulk. The theory may offer one explanation for a new current instability recently discovered [1].
Keywords
Ash; Boundary conditions; Current density; Electron mobility; Frequency; Impedance; Poisson equations; Propagation constant; Space charge; Thermal resistance;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6521
Filename
1448451
Link To Document