DocumentCode
898360
Title
New effects of modified illumination in optical lithography
Author
Asai, Satoru ; Hanyu, Isamu ; Takikawa, Masahiko
Author_Institution
Fujitsu Laboratories Ltd., Morinosato Wakamiya, Atsugi, Japan
Volume
14
Issue
3
fYear
1993
fDate
3/1/1993 12:00:00 AM
Firstpage
110
Lastpage
112
Abstract
In optical lithography the most fine and isolated dark line is obtained at the phase-shifter edge of a chromeless phase-shifting mask, but only closed-loop patterns can be formed. An easy method for eliminating the useless dark line at the phase-shifter edge by combining modified illumination technologies is proposed. Using a modified light source, which is arranged along one axis (x or y) of the light source area, the resultant optical intensity is different in the x and y directions. A fine resist pattern of 0.15 mu m produce along only one direction of the phase-shifter´s edge is demonstrated.<>
Keywords
photolithography; 0.15 micron; chromeless phase-shifting mask; closed-loop patterns; fine resist pattern; isolated dark line; modified illumination; modified light source; optical lithography; phase-shifter edge; Apertures; Interference; Isolation technology; Lenses; Light sources; Lighting; Lithography; Optical diffraction; Position measurement; Resists;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.215127
Filename
215127
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