DocumentCode
898377
Title
H/sub 2//O/sub 2/ plasma on polysilicon thin-film transistor
Author
Chern, Horng Nan ; Lee, Chung Len ; Lei, Tan Fu
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
14
Issue
3
fYear
1993
fDate
3/1/1993 12:00:00 AM
Firstpage
115
Lastpage
117
Abstract
It is reported for that H/sub 2/ plasma followed by O/sub 2/ plasma is more effective for passivating grain boundary states in polysilicon thin film. Polysilicon thin-film transistors (TFTs) made after H/sub 2//O/sub 2/ plasma treatment can exhibit a turn-on threshold voltage of -0.1 V, a subthreshold swing of 0.154 V/decade, an ON/OFF current ratio I/sub on//I/sub off/ over 1*10/sup 8/, and an electron mobility of 40.2 cm/sup 2//V-s.<>
Keywords
carrier mobility; elemental semiconductors; grain boundaries; passivation; silicon; thin film transistors; H/sub 2/ plasma; H/sub 2//O/sub 2/ plasma treatment; O/sub 2/ plasma; electron mobility; grain boundary states; polysilicon; thin-film transistor; Annealing; Grain boundaries; Hydrogen; Passivation; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Plasma properties; Thin film transistors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.215129
Filename
215129
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