A new integrable composite circuit with improved FET-like characteristics

A new composite circuit comprising five active devices (a JFET and four bipolar transistors) and three passive resistors is described and shown to exhibit FET-like characteristics with much improvement in thermal stability and transfer curve linearity over a wide range of input bipolar voltage. The input resistance of the proposed circuit is, however, equal to that of the FET with the additional advantage that it continues to be high even for positive input voltage. The proposed structure is fully compatible with silicon integrated circuit (IC) technology and may thus be commercially mass-produced as a three-terminal device with its terminals designated as gate, drain, and source.