• DocumentCode
    898396
  • Title

    Effect of uniform stress on Si p-n junctions

  • Author

    Brooks, A.D. ; Wortman, J.J.

  • Volume
    56
  • Issue
    7
  • fYear
    1968
  • fDate
    7/1/1968 12:00:00 AM
  • Firstpage
    1221
  • Lastpage
    1222
  • Abstract
    A new method is described for produchrg large stress levels in semiconductor devices. The relative change in breakdown voltage induced by uniaxial stress σ was found to be (ΔV/VB)/σ≃-0.48 × 10-12, where stress is given in dynes/cm2. Experimental results are compared with the energy band model for the piezojunction effect.
  • Keywords
    Anisotropic magnetoresistance; Bonding; Diodes; Electric breakdown; P-n junctions; Silicon; Solids; Steel; Strain measurement; Stress;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6527
  • Filename
    1448457
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=898396