• DocumentCode
    898400
  • Title

    200 nm gated field emitters

  • Author

    Huang, Z. ; McGruer, N.E. ; Warner, K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
  • Volume
    14
  • Issue
    3
  • fYear
    1993
  • fDate
    3/1/1993 12:00:00 AM
  • Firstpage
    121
  • Lastpage
    122
  • Abstract
    The fabrication and electrical characteristics of 200-nm chromium-gated silicon field emitters are reported. These gated emitters are the smallest yet reported. A turn-on voltage of approximately 35 V represents a sublinear scaling of device operating voltage with device size. Emitter failures appear to be very similar to failures of 2- mu m devices produced using the same process.<>
  • Keywords
    chromium; electron field emission; elemental semiconductors; silicon; sputter etching; vacuum microelectronics; 200 nm; 35 V; Cr-Si; electrical characteristics; fabrication; gated field emitters; turn-on voltage; Chromium; Current density; Electric variables; Etching; Fabrication; Ionization; Silicon; Sputtering; Testing; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.215131
  • Filename
    215131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=898400