Title :
Rapid thermal annealing effects on Si p/sup +/-n junctions fabricated by low-energy FIB Ga/sup +/ implantation
Author :
Mogul, H.C. ; Steckl, Andrew J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
fDate :
3/1/1993 12:00:00 AM
Abstract :
Effects of rapid thermal annealing (RTA) on sub-100 nm p/sup +/-n Si junctions fabricated using 10 kV FIB Ga/sup +/ implantation at doses ranging from 10/sup 13/ to 10/sup 15/ cm/sup -2/ are reported. Annealing temperature and time were varied from 550 to 700 degrees C and 30 to 120 s. It was observed that a maximum in the active carrier concentration is achieved at the critical annealing temperature of 600 degrees C. Temperatures above and below the critical temperature were followed by a decrease in the active concentration, leading to a ´reverse´ annealing effect.<>
Keywords :
annealing; carrier density; elemental semiconductors; focused ion beam technology; gallium; ion implantation; p-n junctions; rapid thermal processing; semiconductor doping; silicon; 10 kV; 100 nm; 30 to 120 s; 550 to 700 degC; 600 degC; RTA effects; Si:Ga; active carrier concentration; critical annealing temperature; low-energy FIB Ga/sup +/ implantation; p/sup +/-n junctions; rapid thermal annealing; semiconductors; Circuits; Diodes; Electrical resistance measurement; Fabrication; Implants; Impurities; MOS devices; Rapid thermal annealing; Temperature; Thermal stresses;
Journal_Title :
Electron Device Letters, IEEE
