DocumentCode
898439
Title
Linear dynamic self-heating in SOI MOSFETs
Author
Caviglia, Anthony L. ; Iliadis, Agis A.
Author_Institution
Allied-Signal Aerospace Co., Columbia, MD, USA
Volume
14
Issue
3
fYear
1993
fDate
3/1/1993 12:00:00 AM
Firstpage
133
Lastpage
135
Abstract
A model for small-signal dynamic self-heating is derived for the general case of a two-port device and then specialized to the case of an SOI MOSFET. The model is fitted to measured data for an SOI MOSFET and shown to accurately describe the frequency dependence of the self-heating. For this device, three time constants of 0.25 mu s, 17 ns, and 90 ps adequately characterize the thermal response, showing that self-heating effects are active over a very wide frequency range.<>
Keywords
equivalent circuits; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thermal analysis; SOI MOSFET; frequency dependence; model; small-signal dynamic self-heating; thermal response; two-port device; Admittance; Aerodynamics; Aerospace engineering; Frequency dependence; Frequency measurement; Insulation; MOSFETs; Thermal resistance; Time measurement; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.215135
Filename
215135
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