Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

Author

Neudeck, Philip G. ; Larkin, David J. ; Starr, Jonathan E. ; Powell, J.Anthony ; Salupo, Carl S. ; Matus, Lawrence G.

Author_Institution

NASA Lewis Res. Center, Cleveland, OH, USA

Volume

14

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

136

Lastpage

139

Abstract

The fabrication and initial electrical characterization of greatly improved 3C-SiC ( beta -SiC) p-n junction diodes are reported. These diodes, which were grown on commercially available 6H-SiC ( alpha -SiC) substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.<>

Keywords

chemical vapour deposition; electroluminescence; leakage currents; light emitting diodes; semiconductor diodes; semiconductor materials; silicon compounds; solid-state rectifiers; LED; alpha SiC substrates; beta SiC diodes; chemical vapor deposition; diode blocking voltage; electrical characterization; fabrication; forward bias; green-yellow light; p-n junction diodes; rectification; reverse leakage currents; saturation current densities; semiconductors; Chemical vapor deposition; Current density; Current measurement; Density measurement; Diodes; Fabrication; Leakage current; P-n junctions; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215136

Filename

215136