Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

The fabrication and initial electrical characterization of greatly improved 3C-SiC ( beta -SiC) p-n junction diodes are reported. These diodes, which were grown on commercially available 6H-SiC ( alpha -SiC) substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.<>