Characterization of double pulse-doped channel GaAs MESFETs

Author

Nakajima, Shigeru ; Kuwata, N. ; Shiga, Nobou ; Otobe, K. ; Matsuzaki, K. ; Sekiguchi, T. ; Hayashi, H.

Author_Institution

Sumitomo Electric Industries, Yokohama, Japan

Volume

14

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

146

Lastpage

148

Abstract

The fabrication and characterization of a double pulse-doped (DPD) GaAs MESFET grown by organometallic vapor phase epitaxy (OMVPE) are reported. The electron mobility of a DPD structure with a carrier concentration of 3*10/sup 18//cm/sup 3/ was 2000 cm/sup 2//V-s, which is about 20% higher than that of a pulse-doped (PD) structure. Implementing the DPD structure instead of the conventional PD structure as a GaAs MESFET channel, the drain breakdown voltage, current gain cutoff frequency, and maximum stable gain (MSG) increase. The maximum transconductance of 265 mS/mm at a drain current density of 600 mA/mm, a current gain cutoff frequency of 40 GHz, and an MSG of 11 dB at 18 GHz were obtained for a 0.3 mu m n/sup +/ self-aligned DPD GaAs MESFET.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; carrier density; carrier mobility; gallium arsenide; semiconductor doping; solid-state microwave devices; vapour phase epitaxial growth; 0.3 micron; 11 dB; 265 mS; 40 GHz; GaAs; MESFET; OMVPE; VPE growth; carrier concentration; characterization; current gain cutoff frequency; double pulse-doped channel; drain breakdown voltage; electron mobility; fabrication; maximum stable gain; n/sup +/ self-aligned; organometallic vapor phase epitaxy; transconductance; Buffer layers; Cutoff frequency; Electron mobility; FETs; Fabrication; Gallium arsenide; MESFETs; MMICs; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215139

Filename

215139