Experimental determination of self-heating in submicrometer MOS transistors operated in a liquid-helium ambient

Author

Gutierrez-D., E.A. ; Deferm, Ludo ; Declerck, Gilbert

Author_Institution

IMEC, Leuven, Belgium

Volume

14

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

152

Lastpage

154

Abstract

Self-heating (SH) in submicrometer CMOS transistors operated at liquid-helium temperature and under different bias conditions was experimentally verified by measuring the temperature T/sub Si/ in the proximity of the device. T/sub Si/ was measured by using a silicon resistor, placed in the same bulk nearby the device under test, as a temperature sensor. It was found that the heat generated by the NMOS transistor of a CMOS inverter structure penetrates deep into the substrate and reduces very strongly the n-well impedance, giving rise to large variations in the kink of the I/sub drain/-V/sub drain/ characteristics of the neighbor PMOS transistor. Experimental results confirm that SH must not be underestimated when characterizing and modeling low-temperature device operation.<>

Keywords

CMOS integrated circuits; cryogenics; insulated gate field effect transistors; thermal analysis; 4.2 K; CMOS inverter structure; NMOS transistor; PMOS transistor; bias conditions; liquid He ambient; liquid-helium temperature; low-temperature device operation; n-well impedance; self-heating; submicrometer MOS transistors; temperature sensor; CMOS technology; Inverters; MOS devices; MOSFETs; Resistors; Sensor phenomena and characterization; Silicon; Temperature sensors; Testing; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215141

Filename

215141