Effects of avalanche hole injection in fluorinated SiO/sub 2/ MOS capacitors

Author

Vishnubhotla, Lakshmanna ; Ma, Tso-Ping ; Tseng, Hsing-Huang ; Tobin, Philip J.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

Volume

14

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

196

Lastpage

198

Abstract

Significantly improved immunity to hot-hole damage of the SiO/sub 2//Si structure is achieved by a shallow fluorine implantation into the poly-Si gate of MOS capacitors followed by a drive-in process. Compared to the nonfluorinated control, the fluorinated samples exhibit a dramatic reduction of both hole trapping probability and interface-trap generation under avalanche hole injection conditions. The degree of such an improvement increases monotonically as a function of the F implantation dose (up to 10/sup 16//cm/sup 2/). Significant decrease of the hole detrapping rate is also observed in fluorinated samples. Possible mechanisms are discussed.<>

Keywords

fluorine; hole traps; hot carriers; impact ionisation; interface electron states; ion implantation; metal-insulator-semiconductor devices; silicon; silicon compounds; F implantation dose; MOS capacitors; SiO/sub 2/-Si:F; avalanche hole injection; drive-in process; hole detrapping rate; hole trapping probability; hot hole damage immunity; interface-trap generation; polysilicon gate; shallow implantation; Annealing; Density measurement; Doping; Electron traps; Hot carriers; Human computer interaction; Ionizing radiation; MOS capacitors; MOS devices; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215152

Filename

215152