Title :
High responsivity AlAs/InAs/GaAs superlattice quantum dot infrared photodetector
Author :
Chakrabarti, S. ; Stiff-Roberts, A.D. ; Bhattacharya, P. ; Kennerly, S.W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
The characteristics of quantum dot infrared photodetectors (QDIPs) in which InAs self-organised quantum dots are embedded in an AlAs/GaAs superlattice matrix are reported. An extremely large peak responsivity, Rp=2.5 A/W, is measured at T=78K for Vbias=-1.5 V. A dark current density as low as 3.2×10-4 A/cm2 for Vbias=-2.0 V is also measured at T=300K.
Keywords :
III-V semiconductors; aluminium compounds; current density; dark conductivity; gallium arsenide; indium compounds; infrared detectors; molecular beam epitaxial growth; photodetectors; photolithography; self-assembly; semiconductor heterojunctions; semiconductor quantum dots; semiconductor superlattices; sputter etching; -2 V; 300 K; AlAs-InAs-GaAs; dark current density; molecular beam epitaxial growth; photolithography; self-assembly; semiconductor heterojunction; sputter etching; superlattice quantum dot infrared photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040136
