• DocumentCode
    898558
  • Title

    High responsivity AlAs/InAs/GaAs superlattice quantum dot infrared photodetector

  • Author

    Chakrabarti, S. ; Stiff-Roberts, A.D. ; Bhattacharya, P. ; Kennerly, S.W.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • Volume
    40
  • Issue
    3
  • fYear
    2004
  • Firstpage
    197
  • Lastpage
    198
  • Abstract
    The characteristics of quantum dot infrared photodetectors (QDIPs) in which InAs self-organised quantum dots are embedded in an AlAs/GaAs superlattice matrix are reported. An extremely large peak responsivity, Rp=2.5 A/W, is measured at T=78K for Vbias=-1.5 V. A dark current density as low as 3.2×10-4 A/cm2 for Vbias=-2.0 V is also measured at T=300K.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; dark conductivity; gallium arsenide; indium compounds; infrared detectors; molecular beam epitaxial growth; photodetectors; photolithography; self-assembly; semiconductor heterojunctions; semiconductor quantum dots; semiconductor superlattices; sputter etching; -2 V; 300 K; AlAs-InAs-GaAs; dark current density; molecular beam epitaxial growth; photolithography; self-assembly; semiconductor heterojunction; sputter etching; superlattice quantum dot infrared photodetector;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040136
  • Filename
    1267561
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=898558