Title :
Development and characteristics of MOSFET protein chip using nano SAMs
Author :
Park, K.-Y. ; Han, S.-W. ; Kim, M.-S. ; Choi, S.Y.
Author_Institution :
Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Puk-Gu Daegu, South Korea
Abstract :
Generally, the drain current of a MOSFET is varied by the gate potential. As such, the drain current of a MOSFET protein chip can be varied by Ribosomal proteins that have a positive charge. These current variations can then be used as the response of the protein chip. The current variation in the proposed MOSFET protein chip was about 11.5% with a protein concentration of 0.5 mM.
Keywords :
MOS integrated circuits; MOSFET; monolayers; proteins; self-assembly; 0.5 mm; MOSFET protein chip characteristics; Ribosomal proteins; drain current; gate potential; nano SAM; protein concentration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040134
