MOS characteristics of NH/sub 3/-nitrided N/sub 2/O-grown oxides

Author

Yoon, G.W. ; Joshi, A.B. ; Kim, J. ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

14

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

179

Lastpage

181

Abstract

The technique of NH/sub 3/ nitridation of N/sub 2/O oxides is proposed and demonstrated for increasing nitrogen concentration in N/sub 2/O oxides so as to improve the resistance to boron penetration, without any adverse effects on electrical and reliability properties. Results show that NH/sub 3/-nitrided N/sub 2/O oxides exhibit excellent electrical (low fixed charge) and reliability (smaller charge trapping and suppressed interface state generation) properties, with an additional advantage of significantly improved resistance to boron generation. This technique may have a great impact on deep-submicrometer dual-gate CMOS technology.<>

Keywords

dielectric thin films; interface electron states; metal-insulator-semiconductor devices; nitridation; oxidation; reliability; B penetration resistance; MOS capacitors; MOS characteristics; N/sub 2/O oxides; NH/sub 3/ nitridation; ROXNOX; Si-SiO/sub 2/; Si-SiO/sub x/N/sub y/; charge trapping; deep-submicrometer dual-gate CMOS technology; electrical properties; gate dielectrics; interface state generation; low fixed charge; reliability; Boron; CMOS technology; Dielectrics; Electric resistance; Electron traps; Hot carriers; Interface states; MOS capacitors; MOSFET circuits; Nitrogen;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215158

Filename

215158