Title :
Modeling of a Dual-Drain NMOS Magnetic-Field Sensor
Author :
Nathan, A. ; Andor, L. ; Baltes, H.P. ; Schmidt-Weinmar, H.G.
fDate :
6/1/1985 12:00:00 AM
Abstract :
We present numerical results for the potential, current, and surface charge distributions as well as the sensitivity of a magnetic-field-sensitive split-drain n-channel MOSFET´s operating in the linear region. We also present a suitable circuit configuration that incorporates this device and calculate the overall sensitivity of the resulting magnetic-field-sensitive circuit. Optimization of the device geometry is discussed.
Keywords :
MOSFET circuits; Magnetic field measurement; Modeling; Difference equations; Doping; Electrodes; Finite difference methods; Geometry; MOS devices; MOSFET circuits; Magnetic sensors; Magnetic separation; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052390
