Title :
Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier
Author :
Chang, J.Y-C. ; Abidi, Asad A. ; Gaitan, Michael
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
Large spiral inductors encased in oxide over silicon are shown to operate beyond the UHF band when the capacitance and loss resistance are greatly reduced by selective removal of the underlying substrate. Using a 100-nH inductor whose self-resonance lies at 3 GHz, a balanced tuned amplifier with a gain of 14 dB centered at 770 MHz has been implemented in a standard digital 2- mu m CMOS IC process. The core amplifier noise figure is 6 dB, and the power dissipation is 7 mW for a 3-V supply.<>
Keywords :
CMOS integrated circuits; differential amplifiers; elemental semiconductors; inductors; linear integrated circuits; radiofrequency amplifiers; semiconductor-insulator boundaries; silicon; silicon compounds; 14 dB; 2 micron; 6 dB; 7 mW; 770 MHz; CMOS RF amplifier; Si-SiO/sub 2/; balanced tuned amplifier; capacitance; core amplifier noise figure; large spiral inductors; loss resistance; power dissipation; selective substrate removal; self-resonance; CMOS digital integrated circuits; CMOS integrated circuits; CMOS process; Capacitance; Gain; Inductors; Noise figure; Power amplifiers; Silicon; Spirals;
Journal_Title :
Electron Device Letters, IEEE
