Title :
Defect size variations and their effect on the critical area of VLSI devices
Author :
Ferris-Prabhu, Albert V.
fDate :
8/1/1985 12:00:00 AM
Abstract :
The effect on VLSI device yield of variations in the size of defects has not been widely recognized until recently, when the theory of critical areas and fault probabilities was developed. It is shown that assumptions regarding the defect size distribution can substantially affect the computed critical area.
Keywords :
Fault location; Short-circuit currents; VLSI; fault location; short-circuit currents; Circuit faults; Conductors; Distributed computing; Equations; Geometry; Insulation; Kernel; Semiconductor devices; Substrates; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052404
