Title :
Radiation Effects on Power GaAs MESFET Amplifiers
Author :
Moghe, Sanjay B. ; Gutmann, Ronald J. ; Borrego, Jose M.
Author_Institution :
Raytheon Company, SMDO, Northboro, Mass. 01752
Abstract :
The effect of fast neutron radiation on the electrical characteristics of power GaAs MESFETs and power GaAs MESFET amplifiers has been evaluated. The changes in amplifier power output and intermodulation and harmonic distortion start to occur at neutron fluence of 2 × 1014 n/cm2 and significant degradation is observed at 1 × 1015 n/cm2.
Keywords :
Gallium arsenide; Harmonic distortion; High power amplifiers; Low-noise amplifiers; MESFETs; Microwave amplifiers; Neutrons; Power amplifiers; Radiation effects; Semiconductor optical amplifiers;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1982.4336004
