Title :
Large Stark shift of the interband transition in two-step quantum wells
Author :
Chen, W.Q. ; Wang, S.M. ; Andersson, T.G.
Author_Institution :
Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
6/1/1993 12:00:00 AM
Abstract :
Large and near-linear Stark shifts of the electron-heavy-hole ground state excitonic transition were observed in photoluminescence (PL) measurements for a two-step quantum-well (TSQW) structure. The Stark shift was 40 meV while a corresponding square well shifted only 20 meV at a field of 70 kV/cm. The observed Stark shifts agreed well with calculations. The large Stark shift of the TSQW was achieved on a global-to-local state transition realized via tailor-made quantum well (QW) parameters. This structure is an ideal candidate for optoelectronic devices based on the quantum confined Stark effect (QCSE).<>
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; gallium arsenide; luminescence of inorganic solids; photoluminescence; semiconductor quantum wells; Al/sub 0.35/Ga/sub 0.65/As-Al/sub 0.1/Ga/sub 0.9/As-GaAs; Stark shift; electron-heavy-hole ground state excitonic transition; global-to-local state transition; interband transition; optoelectronic devices; photoluminescence; quantum confined Stark effect; two-step quantum wells; Energy measurement; Gallium arsenide; High speed optical techniques; Molecular beam epitaxial growth; Optoelectronic devices; Photoluminescence; Q measurement; Quantum wells; Stark effect; Stationary state;
Journal_Title :
Electron Device Letters, IEEE
