Title :
Dynamic Early effect in heterojunction bipolar transistors
Author :
Grinberg, Anatoly A. ; Luryi, Serge
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
A theory of base transport in an abrupt-junction heterostructure bipolar transistor (HBT) is developed in the diffusion limit. The theory is valid for a continuous range of emitter injection energies Delta and accounts for the Early effect in both the static and the high-frequency limits. Small-signal network parameters strongly depend on Delta and differ from those in a graded emitter-base junction HBT.<>
Keywords :
heterojunction bipolar transistors; network parameters; semiconductor device models; abrupt junction HBT; base transport; diffusion limit; dynamic Early effect; emitter injection energies; heterojunction bipolar transistors; high-frequency limits; small signal network parameters; static limit; Bipolar transistors; Doping; Electron emission; Equations; Heterojunction bipolar transistors; Photonic band gap; Scattering; Steady-state; Velocity control; Voltage control;
Journal_Title :
Electron Device Letters, IEEE
