Self-aligned AlGaAs/GaAs HBT with selectively regrown OMVPE emitter

Author

Enquist, Paul M. ; Slater, David B., Jr. ; Hutchby, James A. ; Morris, Arthur S. ; Trew, Robert J.

Author_Institution

Research Triangle Inst., Research Triangle Park, NC, USA

Volume

14

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

295

Lastpage

297

Abstract

A self-aligned HBT mesa fabrication process utilizing selective organometallic vapor phase epitaxy (OMVPE) is reported whereby the extrinsic base has been made considerably thicker than the intrinsic base, thus avoiding the conventional tradeoff between base resistance and base transit time. This technique also simplifies processing by eliminating the need for emitter isolation by etching or ion implantation prior to base metallization. Application of this process to AlGaAs/GaAs N-p-n HBTs has yielded an intrinsic to extrinsic base sheet resistance ratio of 1.5, an f/sub T/ of 22 GHz, and an f/sub max/ of 55 GHz.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 22 GHz; 55 GHz; AlGaAs-GaAs; N-p-n HBTs; base resistance; base transit time; cutoff frequency; intrinsic to extrinsic base sheet resistance ratio; maximum frequency of oscillation; selective organometallic vapor phase epitaxy; selectively regrown OMVPE emitter; self-aligned HBT mesa fabrication process; Apertures; Contact resistance; Delay; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Ion implantation; Metallization; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215203

Filename

215203