Title :
Domain stability in the Gunn effect
Author_Institution :
Services Electronics Research Laboratory, Harlow, UK
fDate :
9/1/1965 12:00:00 AM
Abstract :
The present theoretical and experimental knowledge of the high-field domain in the Gunn effect gives conflicting result. The letter shows that these can be reconciled by a modification to the published reasoning about domain formation.
Keywords :
Gunn effect; III-V semiconductors; gallium arsenide; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19650174
