Title :
Extremely low back facet feedback by quantum-confined Stark effect absorption in an edge-emitting light-emitting diode
Author :
Fouquet, J.E. ; Sorin, W.V. ; Trott, G.R. ; Ludowise, M.J. ; Braun, D.M.
Author_Institution :
Hewlett-Packard Lab., Palo Alto, CA, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
The quantum-confined Stark effect is employed to form an integral reverse-biased absorber in a GaInAsP edge-emitting light-emitting diode. Optical low coherence reflectometry is used to measure the magnitude of reflections through this absorber. Front-facet-back-facet roundtrip reflection magnitudes are below -110 dB in devices having an antireflection coating on the front facet only. All other round trip reflections are below -80 dB. This device provides a wide usable dynamic range in optical low coherence reflectometry measurements.<>
Keywords :
III-V semiconductors; Stark effect; antireflection coatings; electro-optical devices; feedback; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; optical films; reflectivity; reflectometry; GaInAsP; LEDs; antireflection coating; edge-emitting; integral reverse-biased absorber; light absorption; light-emitting diode; low back facet feedback; optical low coherence reflectometry; quantum-confined Stark effect absorption; reflections magnitude; roundtrip reflection magnitudes; semiconductors; wide usable dynamic range; Absorption; Indium phosphide; Light emitting diodes; Optical attenuators; Optical feedback; Optical interferometry; Optical reflection; Optical sensors; Photonic band gap; Stark effect;
Journal_Title :
Photonics Technology Letters, IEEE
