Flip-chip planar GaInAs/InP p-i-n photodiode array for parallel optical transmission

Author

Makiuchi, M. ; Norimatsu, M. ; Sakurai, T. ; Kondo, K. ; Yano, M.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

5

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

518

Lastpage

520

Abstract

A back-illuminated planar GaInAs/InP p-i-n photodiode array with a simple fabrication process was developed for application to parallel optical transmission. Four p-i-n photodiodes were integrated in the array. The average capacitance and dark current were as low as 0.12 pF and 8 pA, respectively, at -5 V. At a 1.55- mu m wavelength, the quantum efficiency of each photodiode was over 80%. The cutoff frequency was 8-10 GHz with four photodiodes when the bias voltage was -3 V and the load resistance was 50 Omega . Crosstalk between channels was -12 dB at the cutoff frequency and -45 dB at 1 GHz.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; p-i-n photodiodes; 0.12 pF; 1.55 micron; 5 V; 8 pA; 8 to 10 GHz; 80 percent; GaInAs-InP; IR; average capacitance; back-illuminated; bias voltage; channel crosstalk; cutoff frequency; dark current; fabrication process; flip-chip planar diode array; load resistance; p-i-n photodiode array; parallel optical transmission; quantum efficiency; semiconductors; Capacitance; High speed optical techniques; Indium phosphide; Optical arrays; Optical crosstalk; Optical sensors; PIN photodiodes; Photodetectors; Stimulated emission; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.215267

Filename

215267