Title :
Tensile-strained InGaAs/InGaAsP quantum-well optical amplifiers with a wide spectral gain region at 1.55 mu m
Author :
Miller, B.I. ; Koren, U. ; Newkirk, M.A. ; Young, M.G. ; Jopson, R.M. ; Derosier, R.M. ; Chien, M.D.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
A tensile-strained InGaAsP/InP multi-quantum-well optical amplifier is constructed which has >or=92 nm bandwidth at 16-dB gain for 50-mA drive current. The wide gain bandwidth is a result of both n=1 and n=2 contributions from the e to 1h transition. These results suggest wide tunability for lasers made from this material.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser tuning; semiconductor lasers; 1.55 micron; 16 dB; 50 mA; IR; InGaAs-InGaAsP; drive current; e to 1h transition; laser transitions; laser tunability; multi-quantum-well optical amplifier; quantum-well optical amplifiers; semiconductors; tensile-strained; wide gain bandwidth; wide spectral gain region; wide tunability; Indium gallium arsenide; Laser transitions; Laser tuning; Optical amplifiers; Optical filters; Quantum well lasers; Quantum wells; Semiconductor optical amplifiers; Stimulated emission; Tunable circuits and devices;
Journal_Title :
Photonics Technology Letters, IEEE
