Title :
High-power diffraction-limited monolithic broad area master oscillator power amplifier
Author :
O´Brien, S. ; Mehuys, D. ; Welch, D.F. ; Parke, R. ; Lang, R.J. ; Scifres, D.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
High-power monolithically integrated broad-area master oscillator power amplifiers (MBA-MOPAs), consisting of a distributed-Bragg-reflector (DBR) laser, a preamplifier, a coherent beam expander, and a broad area power amplifier producing up to 800 mW in a single spectral and spatial mode, are fabricated. The MBA-MOPA operates in an edge-emitting configuration with a primarily single-lobe output having a transverse beam divergence of 0.45 degrees , indicating a uniform phase over the 130- mu m emitting aperture.<>
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; semiconductor lasers; 800 mW; DBR laser; InGaAs; broad area power amplifier; coherent beam expander; distributed-Bragg-reflector; edge-emitting configuration; emitting aperture; integrated optics; monolithically integrated broad-area master oscillator power amplifiers; preamplifier; semiconductor laser diodes; single spectral mode; single-lobe output; spatial mode; transverse beam divergence; uniform phase; Apertures; Diffraction; Distributed Bragg reflectors; Distributed amplifiers; High power amplifiers; Laser beams; Laser modes; Oscillators; Power lasers; Preamplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
