Title :
Over 15 dB gain from a monolithically integrated optical switch with an amplifier
Author :
van Roijen, R. ; van der Heijden, J.M.M. ; Tiemeijer, L.F. ; Thijs, P.J.A. ; Van Dongen, T. ; Binsma, J.J.M. ; Verbeek, B.H.
Author_Institution :
Philips Optoelectron. Centre, Eindhoven, Netherlands
fDate :
5/1/1993 12:00:00 AM
Abstract :
An optical switch is monolithically integrated with a semiconductor optical amplifier on a InP substrate. The switch is of the total internal reflection type. The device has achieved 15-dB chip gain at 1530-nm wavelength and fiber-to-fiber lossless transmission over a wavelength range of 80 nm. Crosstalk attenuation varies from 13 to 6 dB. This device demonstrates the feasibility of lossless integrated optics on InP. The technology applied allows monolithic integration of various active components with a minimum of extra technology steps.<>
Keywords :
III-V semiconductors; indium compounds; integrated optoelectronics; optical losses; optical switches; semiconductor lasers; semiconductor switches; 15 dB; 80 nm; IR; InP substrate; active components; chip gain; crosstalk attenuation; fiber-to-fiber lossless transmission; lossless integrated optics; monolithically integrated optical switch; semiconductor optical amplifier; semiconductors; total internal reflection type; Crosstalk; Gain; Indium phosphide; Optical fiber devices; Optical fiber losses; Optical reflection; Optical switches; Propagation losses; Semiconductor optical amplifiers; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
