Over 15 dB gain from a monolithically integrated optical switch with an amplifier

Author

van Roijen, R. ; van der Heijden, J.M.M. ; Tiemeijer, L.F. ; Thijs, P.J.A. ; Van Dongen, T. ; Binsma, J.J.M. ; Verbeek, B.H.

Author_Institution

Philips Optoelectron. Centre, Eindhoven, Netherlands

Volume

5

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

529

Lastpage

531

Abstract

An optical switch is monolithically integrated with a semiconductor optical amplifier on a InP substrate. The switch is of the total internal reflection type. The device has achieved 15-dB chip gain at 1530-nm wavelength and fiber-to-fiber lossless transmission over a wavelength range of 80 nm. Crosstalk attenuation varies from 13 to 6 dB. This device demonstrates the feasibility of lossless integrated optics on InP. The technology applied allows monolithic integration of various active components with a minimum of extra technology steps.<>

Keywords

III-V semiconductors; indium compounds; integrated optoelectronics; optical losses; optical switches; semiconductor lasers; semiconductor switches; 15 dB; 80 nm; IR; InP substrate; active components; chip gain; crosstalk attenuation; fiber-to-fiber lossless transmission; lossless integrated optics; monolithically integrated optical switch; semiconductor optical amplifier; semiconductors; total internal reflection type; Crosstalk; Gain; Indium phosphide; Optical fiber devices; Optical fiber losses; Optical reflection; Optical switches; Propagation losses; Semiconductor optical amplifiers; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.215271

Filename

215271