Title :
Highly compact integrated optical set-reset memory pixels for parallel processing arrays
Author :
An, Xilin ; Geib, K.M. ; Hafich, M.J. ; Beyette, F.R., Jr. ; Field, S.A. ; Robinson, G.Y. ; Wilmsen, C.W.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
An integrated optoelectronic device with a single-mesa structure, which functions as an optical set-reset memory or an optical inverter, is reported. The device is composed of two heterojunction phototransistors and a light-emitting diode vertically integrated on an InGaAsP/InGaAs/InP wafer grown by gas source molecular beam epitaxy. The set and reset beams are incident on a single optical window on each device and are separated by wavelength. The prototype device has shown a large on/off control ratio (27) with relatively low input optical power levels (tens of microwatts). This device concept is extendable to large integrated arrays which are capable of directly processing spatial light signals.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; light emitting diodes; optical storage; optical windows; parallel processing; phototransistors; InGaAsP-InGaAs-InP; LED; MBE; compact integrated optical set-reset memory pixels; gas source molecular beam epitaxy; heterojunction phototransistors; integrated optoelectronic device; large on/off control ratio; light-emitting diode; low input optical power levels; optical inverter; parallel processing arrays; semiconductors; single optical window; single-mesa structure; spatial light signals; vertically integrated; wavelength separation; Heterojunctions; Indium gallium arsenide; Indium phosphide; Integrated optics; Integrated optoelectronics; Inverters; Light emitting diodes; Molecular beam epitaxial growth; Optical devices; Phototransistors;
Journal_Title :
Photonics Technology Letters, IEEE
