SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain

Insulated-gate field-effect transistors using Schottky barrier contacts for the source and drain have been studied. At room temperature, the device characteristics are Comparable to conventional IGFET´s with similar electrode geometry. At lower temperatures, the current transport is by tunneling of carriers from the metal across the Schottky barrier to the semiconductor inversion layer.