DocumentCode
899478
Title
Simple models for high-frequency MESFETs and comparison with experimental results
Author
Oxley, C.H. ; Holden, A.J.
Author_Institution
Plessey Microwave Limited, Towcester, UK
Volume
133
Issue
5
fYear
1986
fDate
10/1/1986 12:00:00 AM
Firstpage
335
Lastpage
340
Abstract
The paper presents a distributed model for high-frequency MESFETs and compares experimentalS-parameter measurements to 26 GHz with distributed and lumped models. The concept of distributed effects within a MESFET is used to modify the Fukui noise model, and good agreement has been obtained between high-frequency (35 GHz) noise measurements and the modified Fukui analysis.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; solid-state microwave devices; 26 GHz; 35 GHz; Fukui noise model; GaAs; S-parameter measurements; distributed model; high frequency MESFET; lumped models; microwave device;
fLanguage
English
Journal_Title
Microwaves, Antennas and Propagation, IEE Proceedings H
Publisher
iet
ISSN
0950-107X
Type
jour
DOI
10.1049/ip-h-2.1986.0061
Filename
4642930
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