DocumentCode
899498
Title
Measurement and modeling of charge feedthrough in n-channel MOS analog switches
Author
Wilson, William B. ; Massoud, Hisham Z. ; Swanson, Eric J. ; George, Rhett T., Jr. ; Fair, Richard B.
Volume
20
Issue
6
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
1206
Lastpage
1213
Abstract
Charge feedthrough in analog MOS switches has been measured. The dependence of the feedthrough voltage on the input and tub voltages, device dimensions, and load capacitances was characterized. Most importantly, it was observed that the feedthrough voltage decreases linearly with the input voltage. The significance of this observation when considering harmonic distortion in sample-and-hold circuits is discussed. A first-order computer simulation based on the quasi-static small-signal MOSFET capacitances shows good agreement with experimental results.
Keywords
Digital simulation; Field effect integrated circuits; Sample and hold circuits; Semiconductor device models; digital simulation; field effect integrated circuits; sample and hold circuits; semiconductor device models; CMOS technology; Capacitance; Charge measurement; Computer simulation; Current measurement; Electrons; MOS capacitors; MOSFET circuits; Switches; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1985.1052460
Filename
1052460
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