Title :
Measurement and modeling of charge feedthrough in n-channel MOS analog switches
Author :
Wilson, William B. ; Massoud, Hisham Z. ; Swanson, Eric J. ; George, Rhett T., Jr. ; Fair, Richard B.
fDate :
12/1/1985 12:00:00 AM
Abstract :
Charge feedthrough in analog MOS switches has been measured. The dependence of the feedthrough voltage on the input and tub voltages, device dimensions, and load capacitances was characterized. Most importantly, it was observed that the feedthrough voltage decreases linearly with the input voltage. The significance of this observation when considering harmonic distortion in sample-and-hold circuits is discussed. A first-order computer simulation based on the quasi-static small-signal MOSFET capacitances shows good agreement with experimental results.
Keywords :
Digital simulation; Field effect integrated circuits; Sample and hold circuits; Semiconductor device models; digital simulation; field effect integrated circuits; sample and hold circuits; semiconductor device models; CMOS technology; Capacitance; Charge measurement; Computer simulation; Current measurement; Electrons; MOS capacitors; MOSFET circuits; Switches; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052460
