DocumentCode
899612
Title
A V/SUB be/(T) model with application to bandgap reference design
Author
Lin, S.L. ; Salama, C.A.T.
Volume
20
Issue
6
fYear
1985
Firstpage
1283
Lastpage
1285
Abstract
The authors discuss a new model for the V/SUB be/(T) characteristics of a bipolar transistor. A curvature-compensated bandgap voltage reference scheme based on this model is described. A CMOS circuit configuration to implement the compensation scheme is proposed. It may be suitable for such uses as high-resolution monolithic data acquisition.
Keywords
Bipolar transistors; CMOS integrated circuits; Compensation; Reference circuits; Semiconductor device models; bipolar transistors; compensation; reference circuits; semiconductor device models; CMOS process; Circuits; Equations; Photonic band gap; Predictive models; Q measurement; Semiconductor device modeling; Temperature dependence; Temperature distribution; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1985.1052470
Filename
1052470
Link To Document