• DocumentCode
    899854
  • Title

    GaSe Schottky barrier gate FET

  • Author

    Kurtin, S. ; Mead, C.A.

  • Volume
    56
  • Issue
    9
  • fYear
    1968
  • Firstpage
    1594
  • Lastpage
    1595
  • Abstract
    Advantages of the Schottky barrier gate technique are reviewed, and an experimental field-effect transistor constructed from p-type GaSe is discussed. Device characteristics are consistent with calculations based on material parameters and the geometry employed.
  • Keywords
    Current transformers; Dipole antennas; Electrostatics; FETs; Frequency; Gases; Magnetic flux; Pulse transformers; Resonance; Schottky barriers;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6658
  • Filename
    1448588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=899854