Title :
CdTe low level gamma detectors based on a new crystal growth method
Author :
Raiskin, E. ; Butler, J.F.
Author_Institution :
San Diego Semicond. Inc., CA, USA
Abstract :
A high-pressure, vertical Bridgman approach was successfully applied to the growth of CdTe gamma-ray detector crystals for application to background-level, low-bias dosimeters. Detectors of 1.8-mm thickness were uniformly able to detect background radiation at bias levels below 10 V and exhibited other desirable features. The growth method makes it possible to produce high-quality, uniform crystals of large volume and has the potential for increasing the availability and lowering the costs of CdTe detectors.<>
Keywords :
II-VI semiconductors; crystal growth from melt; dosimeters; gamma-ray detection and measurement; semiconductor counters; semiconductor growth; 1.8 mm; CdTe low level gamma detectors; II-VI semiconductor; high-pressure; low-bias dosimeters; new crystal growth method; vertical Bridgman approach; Costs; Crystals; Fuel processing industries; Gamma ray detection; Gamma ray detectors; Industrial control; Power generation; Process control; Solid state circuits; Temperature sensors;
Journal_Title :
Nuclear Science, IEEE Transactions on
