Title :
Hot-carrier generation in submicrometer VLSI environment
Author :
Sakurai, Takayasu ; Nogami, Kazutaka ; Kakumu, Masakazu ; Iizuka, Tetsuya
fDate :
2/1/1986 12:00:00 AM
Abstract :
Submicrometer MOSFETs may suffer from reliability degradation, which has a strong correlation with substrate current. In order to know what is happening to substrate current in a VLSI environment, a substrate-current circuit simulator is developed. The simulator is applied to MOS unit circuit blocks, VLSI static memories, and dynamic memories, and their hot-carrier duty ratios are calculated. A new circuit technology, called normally-on enhancement MOSFET insertion (NOEMI), is proposed which can suppress hot-carrier generation. Several design implications for submicrometer VLSIs are obtained through the analysis.
Keywords :
Circuit reliability; Hot carriers; Insulated gate field effect transistors; Integrated circuit technology; Random-access storage; VLSI; circuit reliability; hot carriers; insulated gate field effect transistors; integrated circuit technology; random-access storage; Circuit simulation; Concrete; DRAM chips; Degradation; Hot carriers; MOSFET circuits; Random access memory; Substrates; Very large scale integration; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1986.1052497
