DocumentCode :
899930
Title :
The defect-sensitivity effect of memory chips
Author :
Stapper, Charles H.
Volume :
21
Issue :
1
fYear :
1986
fDate :
2/1/1986 12:00:00 AM
Firstpage :
193
Lastpage :
198
Abstract :
Three effects appear to influence the yield of digital memory chips. In the first effect, yields appear to decrease faster with chip area than is predicted with simple yield models. Although this effect has been described briefly before, more supporting data are given and the applicable yield models are derived from these data. The second effect suggests that the random-defect yield for a chip does not change when its area is shrunk by decreasing the minimum design rules. Although experimental verification for this is limited, it leads to a third effect, namely, that yield can be modeled by the number of circuits. This effect is amply verified with data.
Keywords :
Integrated memory circuits; Sensitivity; integrated memory circuits; sensitivity; Circuit faults; Decoding; Driver circuits; Helium; Integrated circuit yield; Predictive models; Pulse generation; Random access memory; Semiconductor device manufacture; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1986.1052498
Filename :
1052498
Link To Document :
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