Title :
An Overgrowth-Free Design for InGaAlAs Spot-Size-Converted Ridge Waveguide Lasers
Author :
Klotzkin, David ; Huang, Jia-Sheng ; Lu, Hanh ; Nguyen, Trinh ; Pinnington, Tom ; Rajasekaran, Rajasundaram ; Tan, Hua ; Tsai, Charles
Author_Institution :
Cincinnati Univ., Cincinnati
fDate :
7/1/2007 12:00:00 AM
Abstract :
A great deal of work has been done over the past several years toward the development of lasers with integrated spot-size converters, for better coupling directly to flat cleaved fiber or better alignment tolerance in lensed systems. Many of the techniques, such as butt-coupling or lateral-taper-vertical-shift, require etch-and-regrowth over the active region and as such are not applicable directly to Al-containing lasers. In this letter, we demonstrate a simple method to achieve narrow (15deg times 15deg) far fields in Al-containing devices with a moderate degradation of dc, dynamic and thermal characteristics. At room temperature, uncoated 300-mum-long devices have thresholds of about 18 mA and slope efficiencies of about 0.24 W/A, with 27% power coupled directly into flat cleaved fiber compared to ~10% for a conventional (>30deg far field) device. Comparison between calculated and measured far fields versus ridge width and number of quantum wells gives design curve information for optimizing far field performance.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical fibre couplers; quantum well lasers; ridge waveguides; wide band gap semiconductors; InGaAlAs; butt coupling; flat cleaved fiber; integrated spot-size converters; lateral-taper-vertical-shift; overgrowth-free design; quantum wells; ridge waveguide lasers; size 300 mum; temperature 293 K to 298 K; Design optimization; Etching; Fiber lasers; Laser modes; Optical coupling; Optical design; Optical fiber devices; Temperature; Thermal degradation; Waveguide lasers; Optical fiber coupling; semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.898824