DocumentCode
899970
Title
High-efficiency CW impatt operation
Author
Iglesias, David E. ; Evans, W.J.
Author_Institution
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Volume
56
Issue
9
fYear
1968
Firstpage
1610
Lastpage
1610
Abstract
CW room-temperature operation of Ge Impatt diodes with efficiencies as high as 43 percent in the 400 to 1000 MHz frequency range has been achieved. In this low-frequency, high-efficiency mode, the dc voltage drop across the diode is observed to decrease significantly.
Keywords
Attenuation; Circuit optimization; Current density; Diodes; Frequency; Oscillators; Power generation; Silicon; Tuning; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6671
Filename
1448601
Link To Document