DocumentCode :
899970
Title :
High-efficiency CW impatt operation
Author :
Iglesias, David E. ; Evans, W.J.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Volume :
56
Issue :
9
fYear :
1968
Firstpage :
1610
Lastpage :
1610
Abstract :
CW room-temperature operation of Ge Impatt diodes with efficiencies as high as 43 percent in the 400 to 1000 MHz frequency range has been achieved. In this low-frequency, high-efficiency mode, the dc voltage drop across the diode is observed to decrease significantly.
Keywords :
Attenuation; Circuit optimization; Current density; Diodes; Frequency; Oscillators; Power generation; Silicon; Tuning; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1968.6671
Filename :
1448601
Link To Document :
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