DocumentCode :
900045
Title :
Gallium arsenide-a new generation of integrated circuits
Author :
Morgan, D.V.
Author_Institution :
Wales Univ., Swansea, UK
Volume :
34
Issue :
8
fYear :
1988
fDate :
9/15/1988 12:00:00 AM
Firstpage :
315
Lastpage :
319
Abstract :
Since the early days of semiconductor technology, a number of different materials have been studied with a view to investigating phenomena that may lead to significant new devices and ICs. Of all the new materials, the one that has received most attention to date is gallium arsenide, together with some of its closely related binary, ternary and quaternary compounds. After silicon, gallium arsenide is now regarded as the second most important electronic material. To understand the reason for this, the authors identify some of the special properties which make its performance superior
Keywords :
III-V semiconductors; gallium arsenide; integrated circuits; GaAs; ICs; Si; binary compounds; electronic material; integrated circuits; performance; quaternary compounds; semiconductor devices; semiconductor technology; ternary compounds;
fLanguage :
English
Journal_Title :
IEE Review
Publisher :
iet
ISSN :
0953-5683
Type :
jour
Filename :
215418
Link To Document :
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