Title :
Orientation studies of the microwave emission from InSb
Author :
Porter, W.A. ; Ferry, David K.
Abstract :
Microwave emission from n-InSb at 77°K is investigated. Crystalline orientations of 〈100〉, 〈110〉, and 〈111〉 are used to determine dependence of emission on these orientations. Considerable anistropy of emission is observed as B is rotated in the plane perpendicular to E.
Keywords :
Doping; Electrons; Gallium arsenide; Heat treatment; Indium phosphide; Photonic band gap; Surface fitting; Surface treatment; Temperature; Zinc;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6683
