DocumentCode
900314
Title
Cryoelectric hybrid system for very large random access memory
Author
Gange, Robert A.
Author_Institution
RCA Laboratories, Princeton, NJ, USA
Volume
56
Issue
10
fYear
1968
Firstpage
1679
Lastpage
1690
Abstract
The recent introduction of structured cells characterized by no cell-to-cell interaction, adequate sense signal, and array tolerance under repetitive worse-case disturb evaluation and coincident current operation, has made possible new systems approaches. A coincident current "hybrid" (word-bit) system utilizing room temperature decoders and structured loop cell arrays was designed to satisfy the criteria pertinent to a very large random access cryoelectric memory. Besides offering the advantage of an early realization of a cryoelectric memory, compared to previous systems advanced, several other benefits are realized: 1) low electronics cost, especially in large systems sizes, 2) low heat load, and 3) potential plane yield improvement through redundancy techniques. Although a disadvantage is the large number of interconnections, analysis shows that the overall memory cost can be minimized through proper substrate design. The technology required by the hybrid system embodies present art, and very large random access cryoelectric memories employing hybrid organization and loop cell arrays appear to be feasible.
Keywords
Costs; Decoding; Lead; Material storage; Random access memory; Superconducting device noise; Switches; Temperature sensors; Tin; Transistors;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6702
Filename
1448632
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