Title :
Current controlled negative resistance in n-type gallium arsenide
Author :
Hughes, William E.
Abstract :
A current controlled negative differential resistance effect that can produce relaxation-type oscillations at frequencies in the 104- to 105-Hz range has been observed in n-type gallium arsenide.
Keywords :
Breakdown voltage; Conductivity; Electric breakdown; Epitaxial layers; Frequency; Gallium arsenide; Germanium alloys; Gold; Microwave generation; Silver;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6707
