• DocumentCode
    900477
  • Title

    Large-signal transient effect in avalanche diodes

  • Author

    Penfield, P., Jr.

  • Volume
    56
  • Issue
    10
  • fYear
    1968
  • Firstpage
    1727
  • Lastpage
    1728
  • Abstract
    A nonlinear transient effect in avalanche diodes is proposed. In this effect, carriers in a bunch sweep across the depletion region, ionizing as they go, and leaving behind an electric field substantially lower than the initial field, and too low to allow further ionization.
  • Keywords
    Charge carrier processes; Cutoff frequency; Doping; Electron mobility; Ionization; P-i-n diodes; Semiconductor diodes; Silicon; Space charge; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6717
  • Filename
    1448647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=900477