DocumentCode :
900520
Title :
ZettaRAM: A Power-Scalable DRAM Alternative through Charge-Voltage Decoupling
Author :
Venkatesan, Ravi K. ; Al-Zawawi, Ahmed S. ; Sivasubramanian, Krishnan ; Rotenberg, Eric
Author_Institution :
Div. of Mobile Platforms Archit., Intel Technol. India Private Ltd., Bangalore
Volume :
56
Issue :
2
fYear :
2007
Firstpage :
147
Lastpage :
160
Abstract :
ZettaRAMtrade is a nascent memory technology with roots in molecular electronics. It uses a conventional DRAM architecture except that the conventional capacitor is replaced with a new molecular capacitor. The molecular capacitor has a discrete threshold voltage, above which all molecules are charged and below which all molecules are discharged. Thus, while voltage still controls charging/discharging, the fixed charge deposited on the molecular capacitor is voltage-independent. Charge-voltage decoupling makes it possible to lower voltage from one memory generation to the next while still maintaining the minimum critical charge for reliable operation, whereas DRAM voltage scaling is constrained by charge. Voltage can be scaled inexpensively and reliably by engineering new, more favorable molecules. We analyze how three key molecule parameters influence voltage and then evaluate 23 molecules in the literature. Matching DRAM density and speed, the best molecule yields 61 percent energy savings. While the fixed charge is voltage-independent, speed is voltage-dependent. Thus, voltage is padded for competitive latency. We propose dynamically modulating the padding based on criticality of memory requests, further extending ZettaRAM´s energy advantage with negligible system slowdown. Architectural management extends the best molecule´s energy savings to 77 percent and extracts energy savings from six otherwise uncompetitive molecules
Keywords :
capacitors; low-power electronics; molecular electronics; random-access storage; ZettaRAM; architectural management; charge-voltage decoupling; discrete threshold voltage; dynamic voltage scaling; low-power memory; molecular capacitor; molecular electronics; molecular memory; nascent memory technology; power-scalable DRAM; voltage padding; Capacitors; Delay; Energy management; Maintenance engineering; Molecular electronics; Power engineering and energy; Random access memory; Reliability engineering; Threshold voltage; Voltage control; DRAM; dynamic voltage scaling; low-power memory; memory technology.; molecular electronics; molecular memory;
fLanguage :
English
Journal_Title :
Computers, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9340
Type :
jour
DOI :
10.1109/TC.2007.37
Filename :
4042676
Link To Document :
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