Title :
PolSK Label Over VSB-CSRZ Payload Scheme in AOLS Network
Author :
Chen, Hongwei ; Chen, Minghua ; Xie, Shizhong
Author_Institution :
Tsinghua Univ., Beijing
fDate :
6/1/2007 12:00:00 AM
Abstract :
A novel orthogonal modulation scheme of polarization-shift-keying label over vestigial sideband payload is proposed and experimentally demonstrated over a 43-Gb/s all-optical-label-switching transmission. With this scheme, a high extinction ratio of the label is reached, while a spectral efficiency of 0.8 b/s/Hz is achieved by weakening the imperfection of the high-speed pulse sequence in polarization modulation. Furthermore, this modulation scheme is relatively irrelevant with payload bit rate. The payload and label penalties after 80-km NZDSF fiber transmission and label erasure are 1.5 and 1 dB, respectively. The influence of filter center frequency offset is also investigated. Besides, a label rewriting method is introduced to simplify label processing in intermedia nodes. All these results show that this scheme can be a candidate technique for the next-generation optical network.
Keywords :
optical fibre communication; optical fibre polarisation; optical modulation; optical switches; AOLS network; NZDSF fiber transmission; PolSK label; VSB-CSRZ payload scheme; all-optical-label-switching transmission; carrier suppressed return-to-zero; filter center frequency offset; intermedia nodes; label erasure; label penalty; label rewriting method; next-generation optical network; orthogonal modulation scheme; payload bit rate; payload penalty; polarization modulation; polarization-shift-keying label; spectral efficiency; vestigial sideband payload; Bit rate; Extinction ratio; Frequency; Next generation networking; Optical fiber filters; Optical fiber networks; Optical fiber polarization; Payloads; Polarization shift keying; Pulse modulation; All-optical label switching (AOLS); label rewriting; polarization shift keying (PolSK); vestigial sideband (VSB)-carrier suppressed return-to-zero (CSRZ);
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2007.895535
