Title :
Radiation Damage in Semiconductor Detectors
Author_Institution :
Brookhaven National Laboratory Upton, New York 11973
fDate :
6/1/1982 12:00:00 AM
Abstract :
A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced.
Keywords :
Electrons; Germanium; Leak detection; Leakage current; Neutrons; Protons; Radiation detectors; Semiconductor radiation detectors; Silicon; Spectroscopy;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1982.4336328