DocumentCode :
900590
Title :
Radiation Damage in Semiconductor Detectors
Author :
Kraner, H.W.
Author_Institution :
Brookhaven National Laboratory Upton, New York 11973
Volume :
29
Issue :
3
fYear :
1982
fDate :
6/1/1982 12:00:00 AM
Firstpage :
1087
Lastpage :
1100
Abstract :
A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced.
Keywords :
Electrons; Germanium; Leak detection; Leakage current; Neutrons; Protons; Radiation detectors; Semiconductor radiation detectors; Silicon; Spectroscopy;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1982.4336328
Filename :
4336328
Link To Document :
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