Title :
Detector Materials: Germanium and Silicon
Author_Institution :
Lawrence Berkeley Laboratory and Department of Materials Science and Mineral Engineering University of California Berkeley, California 94720 U.S.A.
fDate :
6/1/1982 12:00:00 AM
Abstract :
This article is a summary of a short course lecture given in conjunction with the 1981 Nuclear Science Symposium. The basic physical properties of elemental semiconductors are reviewed. The interaction of energetic radiation with matter is discussed in order to develop a feeling for the appropriate semiconductor detector dimensions. The extremely low net dopant concentrations which are required are derived directly from the detector dimensions. A survey of the more recent techniques which have been developed for the analysis of detector grade semiconductor single crystals is presented.
Keywords :
Bonding; Charge carrier processes; Electrons; Elemental semiconductors; Engine cylinders; Germanium; Photonic band gap; Radiation detectors; Semiconductor impurities; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1982.4336330
