DocumentCode
900612
Title
Detector Materials: Germanium and Silicon
Author
Haller, E.E.
Author_Institution
Lawrence Berkeley Laboratory and Department of Materials Science and Mineral Engineering University of California Berkeley, California 94720 U.S.A.
Volume
29
Issue
3
fYear
1982
fDate
6/1/1982 12:00:00 AM
Firstpage
1109
Lastpage
1118
Abstract
This article is a summary of a short course lecture given in conjunction with the 1981 Nuclear Science Symposium. The basic physical properties of elemental semiconductors are reviewed. The interaction of energetic radiation with matter is discussed in order to develop a feeling for the appropriate semiconductor detector dimensions. The extremely low net dopant concentrations which are required are derived directly from the detector dimensions. A survey of the more recent techniques which have been developed for the analysis of detector grade semiconductor single crystals is presented.
Keywords
Bonding; Charge carrier processes; Electrons; Elemental semiconductors; Engine cylinders; Germanium; Photonic band gap; Radiation detectors; Semiconductor impurities; Silicon;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1982.4336330
Filename
4336330
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